Title:
LIGHT EMITTING APPARATUS AND ELECTRONIC EQUIPMENT
Document Type and Number:
WIPO Patent Application WO/2022/172129
Kind Code:
A1
Abstract:
Provided is a light emitting device that is produced by a photolithography method and has high definition and good characteristics. Provided is a light emitting apparatus in which in adjacent first light emitting device and second light emitting device, the first light emitting device has a first EL layer, the second light emitting device has a second EL layer, the first EL layer has at least a first light emitting layer and a first electron transport layer, the second EL layer has at least a second light emitting layer and a second electron transport layer, the first electron transport layer includes a first heteroaromatic compound and a first organic compound, the second electron transport layer includes a second heteroaromatic compound and a second organic compound, the ends of the first light emitting layer and the first electron transport layer match each other, the ends of the second light emitting layer and the second electron transport layer substantially match each other, and the distance between the first light emitting device and the second light emitting device facing each other is 2-5 μm.
More Like This:
Inventors:
YOSHIYASU YUI (JP)
HASHIMOTO NAOAKI (JP)
TAKAHASHI TATSUYOSHI (JP)
KAWAKAMI SACHIKO (JP)
SEO SATOSHI (JP)
HASHIMOTO NAOAKI (JP)
TAKAHASHI TATSUYOSHI (JP)
KAWAKAMI SACHIKO (JP)
SEO SATOSHI (JP)
Application Number:
PCT/IB2022/050880
Publication Date:
August 18, 2022
Filing Date:
February 02, 2022
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L51/50; G09F9/30; H01L27/32; H05B33/12
Domestic Patent References:
| WO2020079524A1 | 2020-04-23 |
Foreign References:
| JP2011008958A | 2011-01-13 | |||
| JP2018521459A | 2018-08-02 |
Download PDF: