Title:
LIGHT-EMITTING DEVICE, LIGHT-EMITTING APPARATUS, ELECTRONIC EQUIPMENT, AND LIGHTING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/172130
Kind Code:
A1
Abstract:
Provided is a light-emitting device which has high heat resistance during the production process. Provided is a light-emitting device in which: there is a second electrode positioned on a first electrode so as to sandwich a first EL layer therebetween; the first EL layer at least has a first light-emitting layer; there is a second EL layer positioned on the first EL layer; the second EL layer at least has a second light-emitting layer, a first electron transport layer, a second electron transport layer and an electron injection layer; the first electron transport layer is on the second light-emitting layer; the second electron transport layer is on the first electron transport layer; there is an insulating layer which contacts a lateral surface of the first light-emitting layer, a lateral surface of the second light-emitting layer, a lateral surface of the first electron transport layer and a lateral surface of the second electron transport layer; the electron injection layer is on the second electron transport layer; the insulating layer is positioned between the electron injection layer and the lateral surface of the first light-emitting layer, the lateral surface of the second light-emitting layer, the lateral surface of the first electron transport layer and the lateral surface of the second electron transport layer; and the second electron transport layer has a heterocyclic aromatic compound which has one or more heterocyclic aromatic rings and an organic compound which differs from the heterocyclic aromatic compound.
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Inventors:
YOSHIYASU YUI (JP)
HASHIMOTO NAOAKI (JP)
TAKAHASHI TATSUYOSHI (JP)
KAWAKAMI SACHIKO (JP)
SEO SATOSHI (JP)
HASHIMOTO NAOAKI (JP)
TAKAHASHI TATSUYOSHI (JP)
KAWAKAMI SACHIKO (JP)
SEO SATOSHI (JP)
Application Number:
PCT/IB2022/050881
Publication Date:
August 18, 2022
Filing Date:
February 02, 2022
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H05B33/22; H01L51/50; H05B33/12
Domestic Patent References:
WO2020004086A1 | 2020-01-02 |
Foreign References:
US20200161383A1 | 2020-05-21 | |||
JP2007525023A | 2007-08-30 | |||
JP2020504911A | 2020-02-13 | |||
US20150069357A1 | 2015-03-12 | |||
KR20150038800A | 2015-04-09 | |||
CN109509765A | 2019-03-22 |
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