Title:
LIGHT-EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2015/070669
Kind Code:
A1
Abstract:
A light-emitting diode chip and a manufacturing method therefor. The light-emitting diode chip comprises: an epitaxial layer provided with a concave-convex microstructure; a patterned first current expansion layer (304) formed on the convex surface of the epitaxial layer; and a second current expansion layer (305) covering the upper surface of the patterned first current expansion layer (304) and the concave-convex surface of the epitaxial layer of the non-film-covered first current expansion layer (304). The formed double current expansion layers matching the epitaxial layer provided with the concave-convex microstructure can reduce the occurring probability of total reflection, reduce inner reflection and absorption, improve the expansibility of a current, enhance the injection efficiency of the current, and low a working voltage of a device, thereby enhancing the light-emitting efficiency and the brightness of an LED.
More Like This:
| WO/2016/153213 | LIGHT EMITTING DIODE PACKAGE AND LIGHTING DEVICE |
| WO/2007/040149 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME |
| JPH08288547 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
Inventors:
ZHENG JIANSEN (CN)
LIN SU-HUI (CN)
HSU CHEN-KE (CN)
LIN SU-HUI (CN)
HSU CHEN-KE (CN)
Application Number:
PCT/CN2014/086718
Publication Date:
May 21, 2015
Filing Date:
September 17, 2014
Export Citation:
Assignee:
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L33/14; H01L33/00; H01L33/20
Foreign References:
| CN103560189A | 2014-02-05 | |||
| US20090050909A1 | 2009-02-26 | |||
| CN102760795A | 2012-10-31 | |||
| CN102569568A | 2012-07-11 | |||
| CN101419999A | 2009-04-29 | |||
| CN102820396A | 2012-12-12 |
Download PDF:
Previous Patent: IMAGE PROCESSING METHOD AND APPARATUS
Next Patent: LED BRACKET, LED LAMP ELEMENT AND LAMP
Next Patent: LED BRACKET, LED LAMP ELEMENT AND LAMP