LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF

WIPO Patent Application WO/2003/049205

A1

A light emitting layer part (9) of a light emitting element (100) comprising an active layer (5) formed of Mg_xZn_1−xO oxide semiconductor, and a p−clad layer (6) and an n−clad layer (3) similarly formed of Mg_xZn_1−xO oxide semiconductor. On the p−clad layer (6) of the light emitting layer part (9), there is arranged a light extraction layer (7) formed of oxide and having a smaller refractive index to the dominant wavelength of the light emitted from the active layer (5) smaller than that of the clad layers (6 and 3). Therefore, the light emitted from the light emitting layer part (9) can be efficiently extracted from the light emitting element (100). Thus, it is possible to provide a light emitting element of excellent light extraction efficiency in the light emitting element using oxide semiconductor in the light emitting layer part and a manufacturing method thereof.

ISHIZAKI JUN-YA (JP)

PCT/JP2002/011425

June 12, 2003

November 01, 2002

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SHINETSU HANDOTAI KK (JP)
ISHIZAKI JUN-YA (JP)

H01L33/12; H01L33/28; (IPC1-7): H01L33/00

JP2001044495A	2001-02-16
JP2001036130A	2001-02-09
JPS5642388A	1981-04-20
JPH0794783A	1995-04-07
JPH09246593A	1997-09-19
JPH10270749A	1998-10-09
JP2001044499A	2001-02-16
JP2001210864A	2001-08-03

HIROMICHI OTA ET AL.: "Tomei sankabutsu handotai o mochiita kinshigai hakko diode no kaihatsu", CERAMICS, vol. 36, no. 4, 2001, pages 285 - 288, XP002965237

Sugawara, Seirin (Sakae 2-chome Naka-ku Nagoya-shi, Aichi, JP)

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