Title:
Zn BASED SEMICONDUCTOR LUMINESCENT ELEMENT AND METHOD FOR PREPARATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2003/049206
Kind Code:
A1
Abstract:
A Zn based semiconductor luminescent element, which has a p-n junction interface (3) composed of an n-type ZnTe1-xOx (0.5 ≤ x ≤ 1) layer (8) and a p-type ZnTe1-xOx (0 ≤ x < 0.5) layer (7); a method for preparing the above Zn based semiconductor luminescent element, which comprises subjecting the primary surface side of a p-type ZnTe wafer to a thermal oxidation treatment, to thereby form a n-type ZnTeO layer (8) and/or a p-type ZnTeO layer (7). The Zn based semiconductor luminescent element allows the improvement of the luminous efficiency in a luminescent layer comprising a Zn based semiconductor.
Inventors:
ISHIZAKI JUN-YA (JP)
Application Number:
PCT/JP2002/011426
Publication Date:
June 12, 2003
Filing Date:
November 01, 2002
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
ISHIZAKI JUN-YA (JP)
ISHIZAKI JUN-YA (JP)
International Classes:
H01L33/28; (IPC1-7): H01L33/00
Foreign References:
| JPH10270799A | 1998-10-09 | |||
| JPH08148719A | 1996-06-07 |
Other References:
SHER A. ET AL.: "Fabrication of n-native oxide/p-ZnTe heterojunctions by the anodic oxidation of ZnTe MBE layers", JOURNAL OF ELECTRONIC MATERIALS, vol. 21, no. 6, 1992, pages 653 - 657, XP000605903
EBINA A. ET AL.: "Oxidation properties of II-VI compound surfaces studied by low-energy electron-loss spectroscopy and 21eV photoemission spectroscopy", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, vol. 17, no. 5, 1980, pages 1074 - 1079, XP002965789
CANEAU C. ET AL.: "Elaboration and metallurgical characterization of ZnTe:O crystals", JOURNAL OF CRYSTAL GROWTH, vol. 53, 1981, pages 605 - 610, XP002965790
EBINA A. ET AL.: "Oxidation properties of II-VI compound surfaces studied by low-energy electron-loss spectroscopy and 21eV photoemission spectroscopy", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, vol. 17, no. 5, 1980, pages 1074 - 1079, XP002965789
CANEAU C. ET AL.: "Elaboration and metallurgical characterization of ZnTe:O crystals", JOURNAL OF CRYSTAL GROWTH, vol. 53, 1981, pages 605 - 610, XP002965790
Attorney, Agent or Firm:
Sugawara, Seirin (Sakae 2-chome Naka-ku Nagoya-shi, Aichi, JP)
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