Title:
LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2013/118248
Kind Code:
A1
Abstract:
In order to provide a light-emitting element that efficiently injects electrons into a Ge light emission layer and is capable of high-efficiency light emission, the light-emitting element has: a monocrystalline Si barrier layer (3) formed upon an insulating film (2) and machined to a size whereby a quantum confinement effect is manifested; a p-type diffusion layer electrode (5) and an n-type diffusion layer electrode (6) provided at each end of the barrier layer (3), respectively; and a monocrystalline Ge light emission section (9) provided upon the barrier layer (3) between the electrodes (5, 6). At least part of the current flowing between the electrodes (5, 6) flows inside the barrier layer (3), horizontal to a substrate (1).
Inventors:
TANI KAZUKI (JP)
SAITO SHINICHI (JP)
ODA KATSUYA (JP)
SAITO SHINICHI (JP)
ODA KATSUYA (JP)
Application Number:
PCT/JP2012/052642
Publication Date:
August 15, 2013
Filing Date:
February 06, 2012
Export Citation:
Assignee:
HITACHI LTD (JP)
TANI KAZUKI (JP)
SAITO SHINICHI (JP)
ODA KATSUYA (JP)
TANI KAZUKI (JP)
SAITO SHINICHI (JP)
ODA KATSUYA (JP)
International Classes:
H01S5/32; H01L33/34
Foreign References:
| JP2009124184A | 2009-06-04 | |||
| JP2008205006A | 2008-09-04 | |||
| JP2009054873A | 2009-03-12 | |||
| JP2009514231A | 2009-04-02 |
Attorney, Agent or Firm:
POLAIRE I. P. C. (JP)
Polaire Intellectual Property Corporation (JP)
Polaire Intellectual Property Corporation (JP)
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Claims:
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