LIGHT RECEIVING ELEMENT, OPTICAL SENSOR DEVICE, AND METHOD FOR MANUFACTURING LIGHT RECEIVING ELEMENT

WIPO Patent Application WO/2012/046603

A1

Provided is a light receiving element or the like, wherein deterioration of sensitivity on the short wavelength side can be eliminated in a type (2) multiple-quantum well (MQW), while generally improving the sensitivity. The light receiving element is characterized in that the light receiving element is provided with a light receiving layer (3) of the type (2) MQW, which is formed on a substrate (1) composed of a III-V compound semiconductor, has a pixel (P), and is positioned on the substrate (1), the MQW includes 50 or more pairs of two different III-V compound semiconductor layers (3a, 3b), and that the layer (3a) having a higher potential of a valence band, out of the two different III-V compound semiconductor layers that form the pair, is formed thinner than the film thickness of the other layer (3b).

FUJII KEI (JP)
ISHIZUKA TAKASHI (JP)
AKITA KATSUSHI (JP)
IGUCHI YASUHIRO (JP)
INADA HIROSHI (JP)
NAGAI YOUICHI (JP)

PCT/JP2011/072251

April 12, 2012

September 28, 2011

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SUMITOMO ELECTRIC INDUSTRIES (JP)
FUJII KEI (JP)
ISHIZUKA TAKASHI (JP)
AKITA KATSUSHI (JP)
IGUCHI YASUHIRO (JP)
INADA HIROSHI (JP)
NAGAI YOUICHI (JP)

H01L31/10

JPH06196745A	1994-07-15
JP2009206499A	2009-09-10
JPH01205477A	1989-08-17
JP2005116567A	2005-04-28

SATORU FUJII ET AL.: "MOVPE Seicho shita InGaAs/GaAsSb Type II Ryoshi Ido o Mochiita 2.5pm-Tai Photodiode", DAI 70 KAI THE JAPAN SOCIETY OF APPLIED PHYSICS GAKUJUTSU KOENKAI KOEN YOKOSHU, vol. 1, 2009, pages 301, XP008163897

NAKATA, Motomi et al. (JP)
Nakada Motoki (JP)

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