Title:
LITHIUM TANTALATE SINGLE CRYSTAL GROWTH DEVICE AND GROWTH METHOD
Document Type and Number:
WIPO Patent Application WO/2016/010040
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a device and method for growing a single crystal which is inexpensive and devoid of fine bubbles and the occurrence of sub-grains, and has longer service life. A lithium tantalate single crystal growth device for heating a starting material in a crucible 4 through use of a resistance heating heater 6, bringing a seed crystal 3 into contact with the molten starting material melt 5, and then withdrawing the seed crystal 3 and growing a single crystal, the crucible 4 having a coating layer 4b comprising a Pt-Rh alloy having a rhodium content of 25-45% (percent by mass; the same hereinafter) on an inside surface of a crucible body 4a comprising tungsten, molybdenum, or tantalum.
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Inventors:
FUKUDA TSUGUO (JP)
Application Number:
PCT/JP2015/070166
Publication Date:
January 21, 2016
Filing Date:
July 14, 2015
Export Citation:
Assignee:
FUKUDA CRYSTAL LAB (JP)
International Classes:
C30B29/30; C30B15/10; C30B15/12
Foreign References:
| JPS57156400A | 1982-09-27 | |||
| JP2012041200A | 2012-03-01 | |||
| JP2002137985A | 2002-05-14 | |||
| JP2005029455A | 2005-02-03 | |||
| JPH11116389A | 1999-04-27 | |||
| JP2004256322A | 2004-09-16 | |||
| JP2003300791A | 2003-10-21 | |||
| JPH0920584A | 1997-01-21 | |||
| JPS5515938A | 1980-02-04 | |||
| JPS60200980A | 1985-10-11 |
Attorney, Agent or Firm:
FUKUMORI, Hisao (JP)
Hisao Fukumori (JP)
Hisao Fukumori (JP)
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