Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
LOW DIELECTRIC CONSTANT LAYERS
Document Type and Number:
WIPO Patent Application WO2003009364
Kind Code:
A3
Abstract:
This invention relates to low dielectric constant layers formed on the substrate having: (a) a base zone, adjacent the substrate, having pores distributed therein, at least the majority of the pores having diameters in the range 1 to 10 nm; (b) an atomically smooth surface zone, spaced from the substrate; and (c) an intermediate zone having pores distributed therein, at least the majority of the pores having diameters equal to or less than 2 nm so that there is a general reduction in pore size from the bottom of the layer towards the top.

More Like This:
JP2002526654INDUSTRIAL APPLICABILITY [Invention title] Composite material coating and method for producing the same.
WO/2006/097525METHOD OF FORMING SILICON OXIDE CONTAINING FILMS
WO/2024/058624PRECURSOR FOR FORMING LANTHANIDE METAL-CONTAINING THIN FILM, METHOD FOR FORMING LANTHANIDE METAL-CONTAINING THIN FILM USING SAME, AND SEMICONDUCTOR ELEMENT INCLUDING LANTHANIDE METAL-CONTAINING THIN FILM
Inventors:
GILES KATHRINE (GB)
Application Number:
PCT/GB2002/003231
Publication Date:
July 24, 2003
Filing Date:
July 15, 2002
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
TRIKON HOLDINGS LTD (GB)
GILES KATHRINE (GB)
International Classes:
C23C16/40; H01L21/768; C23C16/56; H01L21/316; H01L23/522; (IPC1-7): H01L21/316
Domestic Patent References:
WO1998050945A21998-11-12
Foreign References:
US5561318A1996-10-01
EP0687004A11995-12-13
EP0881678A21998-12-02
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: PLASMA PROCESSOR AND PLASMA PROCESSING METHOD

Next Patent: METHOD FOR ENHANCING SURFACE CONDITION OF A SEMICONDUCTOR WAFER