Title:
PLASMA PROCESSOR AND PLASMA PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2003/009363
Kind Code:
A1
Abstract:
An etching chamber (1) incorporates a focus ring (9) so as to surround a semiconductor wafer (W) provided on a lower electrode (4). The plasma processor is provided with a potential control DC power source (33) to control the potential of this focus ring (9) and so constituted that the lower electrode (4) is supplied with a DC voltage of, e.g., −400 to −600V to control the potential of the focus ring (9). This constitution prevents arcking from developing along the surface of a substrate to be processed
Inventors:
KIKUCHI AKIHIRO (JP)
KAYAMORI SATOSHI (JP)
SHIMA SHINYA (JP)
SAKAMOTO YUICHIRO (JP)
HIGUCHI KIMIHIRO (JP)
OOHASHI KAORU (JP)
UEDA TAKEHIRO (JP)
SHIBUYA MUNEHIRO (JP)
GONDAI TADASHI (JP)
KAYAMORI SATOSHI (JP)
SHIMA SHINYA (JP)
SAKAMOTO YUICHIRO (JP)
HIGUCHI KIMIHIRO (JP)
OOHASHI KAORU (JP)
UEDA TAKEHIRO (JP)
SHIBUYA MUNEHIRO (JP)
GONDAI TADASHI (JP)
Application Number:
PCT/JP2002/006665
Publication Date:
January 30, 2003
Filing Date:
July 02, 2002
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
KIKUCHI AKIHIRO (JP)
KAYAMORI SATOSHI (JP)
SHIMA SHINYA (JP)
SAKAMOTO YUICHIRO (JP)
HIGUCHI KIMIHIRO (JP)
OOHASHI KAORU (JP)
UEDA TAKEHIRO (JP)
SHIBUYA MUNEHIRO (JP)
GONDAI TADASHI (JP)
KIKUCHI AKIHIRO (JP)
KAYAMORI SATOSHI (JP)
SHIMA SHINYA (JP)
SAKAMOTO YUICHIRO (JP)
HIGUCHI KIMIHIRO (JP)
OOHASHI KAORU (JP)
UEDA TAKEHIRO (JP)
SHIBUYA MUNEHIRO (JP)
GONDAI TADASHI (JP)
International Classes:
H01J37/32; (IPC1-7): H01L21/3065
Foreign References:
| JPH11135483A | 1999-05-21 | |||
| JPH07254588A | 1995-10-03 | |||
| JP2000164583A | 2000-06-16 | |||
| JPH08264509A | 1996-10-11 | |||
| US5556500A | 1996-09-17 | |||
| US5552124A | 1996-09-03 |
Attorney, Agent or Firm:
Suyama, Saichi (1 Kandata-cho 2-chom, Chiyoda-ku Tokyo, JP)
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