Title:
LOW EMITTER RESISTANCE CONTACTS TO GAAS HIGH SPEED HBT
Document Type and Number:
WIPO Patent Application WO2003009368
Kind Code:
A3
Abstract:
A heterojunction bipolar transistor, (40), is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor, (40), shown in Figure 1, includes a contact region layer (22), formed from InGaAsSb. The contact region, (20/22), allows an emitter region, (18), of the heterojunction bipolar transistor, (40), to realize a lower contact resistance value to yield an improved cutoff frequency (fT).
Inventors:
PAN NOREN
HAN BYUNG-KWON
HAN BYUNG-KWON
Application Number:
PCT/US2002/023278
Publication Date:
November 27, 2003
Filing Date:
July 22, 2002
Export Citation:
Assignee:
MICROLINK DEVICES INC (US)
International Classes:
H01L21/331; H01L29/08; H01L29/45; H01L29/737; H01L29/161; (IPC1-7): H01L21/338; H01L21/28
Foreign References:
| US6287946B1 | 2001-09-11 | |||
| US6320212B1 | 2001-11-20 | |||
| US6232624B1 | 2001-05-15 | |||
| JPH0338834A | 1991-02-19 | |||
| US6429468B1 | 2002-08-06 | |||
| US5598015A | 1997-01-28 |
Other References:
HUMMEL R.E.: "Electronic properties of materials", 2001, SPRINGER, XP002960165
OHRING M.: "Materials science of thin films", 2002, ACADEMIC, pages: 444 - 450, XP002960178
OHRING M.: "Materials science of thin films", 2002, ACADEMIC, pages: 444 - 450, XP002960178
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