Title:
METHOD FOR ENHANCING SURFACE CONDITION OF A SEMICONDUCTOR WAFER
Document Type and Number:
WIPO Patent Application WO2003009366
Kind Code:
A9
Abstract:
The invention concerns a method for enhancing the condition of the free surface of a semiconductor material wafer, said method comprising a step which consists in rapid thermal annealing so as to smooth said free surface. The invention is characterised in that said method consists, prior to rapid thermal annealing, in a treatment of a surface zone of the wafer so as to prevent occurrence of pitting during rapid thermal annealing, and the rapid thermal annealing process can be carried out under non-reducing atmosphere. The invention also concerns a structure produced by said method.
Inventors:
MALEVILLE CHRISTOPHE (FR)
NEYRET ERIC (FR)
NEYRET ERIC (FR)
Application Number:
PCT/FR2002/002543
Publication Date:
April 08, 2004
Filing Date:
July 16, 2002
Export Citation:
Assignee:
SOITEC SILICON ON INSULATOR (FR)
MALEVILLE CHRISTOPHE (FR)
NEYRET ERIC (FR)
MALEVILLE CHRISTOPHE (FR)
NEYRET ERIC (FR)
International Classes:
H01L21/26; H01L21/324; H01L21/762; (IPC1-7): H01L21/324; H01L21/306
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