LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM, THIN FILM TRANSISTOR AND RESPECTIVE PREPARATION METHOD AND DISPLAY DEVICE

WIPO Patent Application WO/2017/028499

A1

Provided are a low-temperature polycrystalline silicon thin film, a thin film transistor and a preparation method and a display device. The preparation method for the low-temperature polycrystalline silicon thin film comprises: forming an amorphous silicon thin film above a substrate; and performing laser annealing on the amorphous silicon thin film by using a mask plate (10) so as to form the low-temperature polycrystalline silicon thin film (21); wherein the mask plate comprises a light transmitting region (Q1) and a light blocking region (Q2) surrounding the light transmitting region, and two side edges of the light blocking region adjacent to the light transmitting region are in concave-convex shapes.

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LI DONG (CN)
LU XIAOYONG (CN)
LI XIAOLONG (CN)
LIU ZHENG (CN)
ZHANG SHUAI (CN)
CHAN YUCHENG (CN)
LIU CHIEN HUNG (CN)
LONG CHUNPING (CN)

PCT/CN2016/071715

February 23, 2017

January 22, 2016

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BOE TECHNOLOGY GROUP CO LTD (CN)

H01L21/02; H01L29/786

CN105097453A	2015-11-25
CN101202218A	2008-06-18
TW200720836A	2007-06-01
CN1527405A	2004-09-08
US20120097963A1	2012-04-26

TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)

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