Title:
LOW TEMPERATURE POLYSILICON TFT SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2016/155056
Kind Code:
A1
Abstract:
A low temperature polysilicon TFT substrate structure and a manufacturing method therefor. By setting the thickness of an amorphous silicon layer (12) of a driving TFT area and a display TFT area to be different, enabling the thickness of the amorphous silicon layer (12) of the driving TFT area to be smaller, and the thickness of the amorphous silicon layer (12) of the display TFT area to be larger, such that the amorphous silicon layers (12) of the driving TFT area and the display TFT area generate different crystallization effects under the effect of the same energy laser during excimer laser annealing treatment, and the size of crystallizing particles is controlled, so that a larger crystal lattice size of a polysilicon layer (12) in the driving TFT area is formed in the crystallization process, the electron mobility is increased, crystal breakage of a polysilicon layer (12) in the display TFT area is realized in the crystallization process, the crystal boundary uniformity is guaranteed, and the current uniformity is improved; accordingly, electrical requirements of different TFTs are met, and the luminous uniformity of an OLED is improved.
Inventors:
ZHANG XIAOXING (CN)
Application Number:
PCT/CN2015/077160
Publication Date:
October 06, 2016
Filing Date:
April 22, 2015
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L21/84; H01L21/336; H01L27/12; H01L29/04; H01L29/06; H01L29/786
Foreign References:
| CN101075635A | 2007-11-21 | |||
| CN1691090A | 2005-11-02 | |||
| US20040188683A1 | 2004-09-30 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
深圳市德力知识产权代理事务所 (CN)
深圳市德力知识产权代理事务所 (CN)
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