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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING MICROCRYSTALLINE Si-TFT SUBSTRATE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/047694
Kind Code:
A1
Abstract:
A method for manufacturing a semiconductor device comprises the steps of preparing a substrate (10) having a main surface, forming a first microcrystalline Si layer (18a) at a first temperature on the main surface of the substrate (10) while supplying a source gas containing Si, and, as a continuation after the step of forming the first microcrystalline Si layer, the step of forming a second microcrystalline Si layer (18b) at a second temperature lower than the first temperature on the first microcrystalline Si layer (18a) while supplying a source gas containing Si. The film adhesion of the first microcrystalline Si layer (18a) to the substrate is greater than the film adhesion of the second microcrystalline Si layer (18b) to the substrate.

Inventors:
MIZUKI TOSHIO
KOHNO AKIHIKO
TANAKA KOHICHI
Application Number:
PCT/JP2012/074958
Publication Date:
April 04, 2013
Filing Date:
September 27, 2012
Export Citation:
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Assignee:
SHARP KK (JP)
International Classes:
H01L29/786; H01L21/205; H01L21/336
Foreign References:
JP2008311286A2008-12-25
JP2009054719A2009-03-12
JP2011103370A2011-05-26
Attorney, Agent or Firm:
OKUDA SEIJI (JP)
Seiji Okuda (JP)
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Claims: