Title:
METHOD FOR MANUFACTURING SiC EPITAXIAL WAFER AND SiC EPITAXIAL GROWTH APPARATUS
Document Type and Number:
WIPO Patent Application WO/2016/098638
Kind Code:
A1
Abstract:
A method for manufacturing a SiC epitaxial wafer according to an embodiment of the present invention comprises: separately introducing, into a reaction space for SiC epitaxial growth,a basic N-based gas that includes N atoms in the molecules and is composed of molecules which have neither double bonds nor triple bonds between the N atoms and a Cl-based gas composed of molecules that include Cl atoms in the molecules; and mixing the N-based gas and Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and Cl-based gas.
Inventors:
FUKADA KEISUKE (JP)
ITO MASAHIKO (JP)
KAMATA ISAHO (JP)
TSUCHIDA HIDEKAZU (JP)
UEHIGASHI HIDEYUKI (JP)
FUJIBAYASHI HIROAKI (JP)
NAITO MASAMI (JP)
HARA KAZUKUNI (JP)
KOZAWA TAKAHIRO (JP)
AOKI HIROFUMI (JP)
ITO MASAHIKO (JP)
KAMATA ISAHO (JP)
TSUCHIDA HIDEKAZU (JP)
UEHIGASHI HIDEYUKI (JP)
FUJIBAYASHI HIROAKI (JP)
NAITO MASAMI (JP)
HARA KAZUKUNI (JP)
KOZAWA TAKAHIRO (JP)
AOKI HIROFUMI (JP)
Application Number:
PCT/JP2015/084386
Publication Date:
June 23, 2016
Filing Date:
December 08, 2015
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
CENTRAL RES INST ELECT (JP)
CENTRAL RES INST ELECT (JP)
International Classes:
C30B29/36; C23C16/42; C23C16/455; C30B25/14; H01L21/205
Foreign References:
| JP2014123617A | 2014-07-03 | |||
| JP2012054528A | 2012-03-15 | |||
| JP2012069904A | 2012-04-05 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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