Title:
MAGNETIC ELEMENT, SKYRMION MEMORY, CENTRAL PROCESSING LSI EQUIPPED WITH SKYRMION MEMORY, DATA RECORDING DEVICE, DATA PROCESSING DEVICE, AND DATA COMMUNICATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/092610
Kind Code:
A1
Abstract:
Provided is high-speed, large-scale, non-volatile skyrmion random accessory memory that prevents erroneous writing and erroneous erasing, that comprises a circuit having good detection sensitivity of stored data, that results in little leakage current, and that has low power consumption. In addition, a magnetic element for generating and erasing skyrmions is provided with: a first magnetic thin film on which skyrmions are generated and erased; a detection element for detecting skyrmions; and at least one of a first transistor for selecting the first magnetic thin film and a second transistor for selecting the skyrmion detection element.
More Like This:
JP2021022748 | SEMICONDUCTOR DEVICE |
JP2022075571 | SEMICONDUCTOR ELEMENT CONTAINING CHALCOGEN COMPOUND LAYER AND SEMICONDUCTOR DEVICES INCLUDING THE SAME |
JP2018129109 | MAGNETIC MEMORY DEVICE |
Inventors:
KANEKO YOSHIO (JP)
TOKURA YOSHINORI (JP)
TOKURA YOSHINORI (JP)
Application Number:
PCT/JP2017/039829
Publication Date:
May 24, 2018
Filing Date:
November 02, 2017
Export Citation:
Assignee:
RIKEN (JP)
International Classes:
H01L21/8239; G11C11/16; H01L27/105; H01L29/82; H01L43/08
Domestic Patent References:
WO2016035579A1 | 2016-03-10 | |||
WO2016035758A1 | 2016-03-10 | |||
WO2016021349A1 | 2016-02-11 | |||
WO2016067744A1 | 2016-05-06 |
Foreign References:
JP2004153182A | 2004-05-27 | |||
JP2013243336A | 2013-12-05 | |||
JP5985728B1 | 2016-09-06 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
Download PDF: