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Title:
MAGNETIC ELEMENT, SKYRMION MEMORY, CENTRAL PROCESSING LSI EQUIPPED WITH SKYRMION MEMORY, DATA RECORDING DEVICE, DATA PROCESSING DEVICE, AND DATA COMMUNICATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/092610
Kind Code:
A1
Abstract:
Provided is high-speed, large-scale, non-volatile skyrmion random accessory memory that prevents erroneous writing and erroneous erasing, that comprises a circuit having good detection sensitivity of stored data, that results in little leakage current, and that has low power consumption. In addition, a magnetic element for generating and erasing skyrmions is provided with: a first magnetic thin film on which skyrmions are generated and erased; a detection element for detecting skyrmions; and at least one of a first transistor for selecting the first magnetic thin film and a second transistor for selecting the skyrmion detection element.

Inventors:
KANEKO YOSHIO (JP)
TOKURA YOSHINORI (JP)
Application Number:
PCT/JP2017/039829
Publication Date:
May 24, 2018
Filing Date:
November 02, 2017
Export Citation:
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Assignee:
RIKEN (JP)
International Classes:
H01L21/8239; G11C11/16; H01L27/105; H01L29/82; H01L43/08
Domestic Patent References:
WO2016035579A12016-03-10
WO2016035758A12016-03-10
WO2016021349A12016-02-11
WO2016067744A12016-05-06
Foreign References:
JP2004153182A2004-05-27
JP2013243336A2013-12-05
JP5985728B12016-09-06
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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