MAGNETIC-FIELD CONCENTRATION IN INDUCTIVELY COUPLED PLASMA REACTORS

WIPO Patent Application WO2006044419

A3

A substrate processing system is provided with a housing defining a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate during substrate processing. A gas delivery system is configured to introduce a gas into the process chamber. A pressure-control system is provided for maintaining a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber and includes a coil for inductively coupling energy into a plasma formed within the process chamber. It also includes magneto-dielectric material proximate the coil for concentrating a magnetic field generated by the coil. A controller is also provided for controlling the gas-delivery system, the pressure-control system, and the high-density-plasma generating system.

WO/1997/046730	TEMPERATURE CONTROLLING METHOD AND APPARATUS FOR A PLASMA PROCESSING CHAMBER
JP5638449	Inductively coupled plasma processing equipment
JPS59121918	VAPOR GROWTH DEVICE FOR COMPOUND

LU SIQING (US)
LAI CANFENG (US)
LIANG QIWEI (US)
LONG MAOLIN (US)
CHOU IRENE (US)
BLOKING JASON (US)
KIM STEVEN H (US)
YIEH ELLIE Y (US)

PCT/US2005/036579

July 13, 2006

October 12, 2005

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APPLIED MATERIALS INC (US)
LU SIQING (US)
LAI CANFENG (US)
LIANG QIWEI (US)
LONG MAOLIN (US)
CHOU IRENE (US)
BLOKING JASON (US)
KIM STEVEN H (US)
YIEH ELLIE Y (US)

C23C16/507; C23C16/50; H01J37/32

US20040107906A1	2004-06-10
US5828940A	1998-10-27
US5529747A	1996-06-25
US5824607A	1998-10-20

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