Title:
MAGNETIC RANDOM MEMORY UNIT AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/201779
Kind Code:
A1
Abstract:
A magnetic random memory unit, comprising: a first spin-orbit torque provision layer, having two or more regions, said regions at least having a first region and a second region, the first region having a first doping characteristic, and the second region having a second doping characteristic; and a magnetic tunnel junction, arranged on the spin-orbit torque provision layer, the magnetic tunnel junction at least covering a part of each region. The magnetic random memory unit can generate different spin Hall angles by means of different interfacial effects of the first region and the second region, thus breaking symmetry and reversing a free layer of the magnetic tunnel junction without an external magnetic field.
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Inventors:
LI ZHOU (CN)
MENG HAO (CN)
SHI YI NUO (CN)
FENG XIANG (CN)
MENG HAO (CN)
SHI YI NUO (CN)
FENG XIANG (CN)
Application Number:
PCT/CN2022/090980
Publication Date:
October 26, 2023
Filing Date:
May 05, 2022
Export Citation:
Assignee:
CETHIK GROUP CO LTD (CN)
International Classes:
H01L43/08
Foreign References:
| US20200098410A1 | 2020-03-26 | |||
| CN111508992A | 2020-08-07 | |||
| CN110323330A | 2019-10-11 | |||
| CN111640769A | 2020-09-08 | |||
| US20100014347A1 | 2010-01-21 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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