Title:
MAGNETIC STORAGE UNIT AND SOT-MRAM MEMORY
Document Type and Number:
WIPO Patent Application WO/2020/135053
Kind Code:
A1
Abstract:
Provided in the present invention are a magnetic storage unit and an SOT-MRAM memory. The magnetic storage unit comprises: a spin orbit torque providing line and two magnetic tunnel junctions, wherein each of the magnetic tunnel junctions comprises a free layer, a tunnel layer and a reference layer stacked in sequence; the two magnetic tunnel junctions are located on the same side of the spin orbit torque providing line, and the respective free layers thereof are close to the spin orbit torque providing line; outer sides of the reference layers of the two magnetic tunnel junctions are respectively provided with a bias magnetic field providing layer; the bias magnetic field providing layers are separated from the magnetic tunnel junctions by means of separating layers; the two bias magnetic field providing layers have different geometrical dimensions, and moreover, the magnetization directions of the two bias magnetic field providing layers are opposing and are respectively perpendicular to the magnetization directions of the free layers of the respectively corresponding magnetic tunnel junctions. The present invention can increase the read-write speed of the SOT-MRAM memory.
Inventors:
HE SHIKUN (CN)
Application Number:
PCT/CN2019/124566
Publication Date:
July 02, 2020
Filing Date:
December 11, 2019
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L43/08
Foreign References:
| CN107689415A | 2018-02-13 | |||
| CN107004440A | 2017-08-01 | |||
| CN108470826A | 2018-08-31 | |||
| CN105161613A | 2015-12-16 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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