Title:
MAGNETORESISTIVE ELEMENT AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/095785
Kind Code:
A1
Abstract:
A magnetoresistive element according to the present disclosure comprises a multilayer structure 40 that is composed of at least a magnetization fixed layer, an intermediate layer and a storage layer; a first side wall 51 is formed on a lateral wall of the multilayer structure 40; a second side wall 52 is formed on the first side wall 51; the first side wall 51 is formed from an insulating material such as SiN or AlOx, which prevents entrance of hydrogen; and the second side wall 52 is formed from a hydrogen storage material such as titanium.
Inventors:
SUEMITSU KATSUMI (JP)
UEKI MAKOTO (JP)
MORITOKI MASASHIGE (JP)
UEKI MAKOTO (JP)
MORITOKI MASASHIGE (JP)
Application Number:
PCT/JP2019/042536
Publication Date:
May 14, 2020
Filing Date:
October 30, 2019
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L43/08; H01L21/8239; H01L27/105; H01L43/10
Foreign References:
| JP2014056941A | 2014-03-27 | |||
| JP2002076296A | 2002-03-15 | |||
| JP2006253303A | 2006-09-21 | |||
| JP2004031553A | 2004-01-29 | |||
| JP2004186353A | 2004-07-02 | |||
| JP2007134736A | 2007-05-31 |
Attorney, Agent or Firm:
YAMAMOTO Takahisa et al. (JP)
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