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Title:
MANUFACTURING METHOD FOR GAN THERMOELECTRIC THIN FILM MATERIAL
Document Type and Number:
WIPO Patent Application WO/2019/041490
Kind Code:
A1
Abstract:
Disclosed is a manufacturing method for a GaN thermoelectric thin film material. The process utilizes a patterned sapphire substrate that undergoes H2 purification, low-temperature buffered growth, warmed transverse growth, and pressurized annealing to produce the GaN thin film material. The GaN thermoelectric thin film material so manufactured has great overall uniformity, a high breakdown voltage, extended service life, and improved application prospects.

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Inventors:
DAI XIAOCHEN (CN)
Application Number:
PCT/CN2017/107224
Publication Date:
March 07, 2019
Filing Date:
October 23, 2017
Export Citation:
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Assignee:
SUZHOU YUNSHU NEW MATERIAL TECH CO LTD (CN)
International Classes:
H01L35/22; H01L21/02
Foreign References:
CN104037284A2014-09-10
CN103682016A2014-03-26
CN104091759A2014-10-08
US20110240082A12011-10-06
CN103548124A2014-01-29
Attorney, Agent or Firm:
CHANGZHOU ZIRRON PATENT OFFICE (GENERAL PARTNERSHIP) (CN)
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