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Patent Searching and Data


Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE MANUFACTURING SHEET
Document Type and Number:
WIPO Patent Application WO/2021/193916
Kind Code:
A1
Abstract:
Provided is a manufacturing method for a semiconductor device manufacturing sheet. The semiconductor device manufacturing sheet comprises a base material, an adhesive layer, an intermediate layer, a film-like bonding agent, and a second peeling film that are stacked in the stated order. The manufacturing method comprises: a first machining step for removing at least a portion of the intermediate layer and the film-like bonding agent from a second intermediate laminate comprising the intermediate layer, the film-like bonding agent, and a first peeling film, thereby attaining a second intermediate laminate machining product; a laminating step for bonding the first intermediate laminate comprising the base material and the adhesive layer together with the second intermediate laminate machining product, thereby attaining a first laminate; a re-pasting step for peeling the first peeling film from the first laminate and pasting the first peeling film onto the second peeling film, thereby attaining a second laminate; and a second machining step for eliminating at least a portion of the base material and the adhesive layer from the second laminate, thereby attaining the semiconductor device manufacturing sheet. The peeling force between the first peeling film and the film-like bonding agent is greater than the peeling force between the second peeling film and the film-like bonding agent.

Inventors:
ADACHI ISSEI (JP)
IWAYA WATARU (JP)
SATO YOSUKE (JP)
Application Number:
PCT/JP2021/012844
Publication Date:
September 30, 2021
Filing Date:
March 26, 2021
Export Citation:
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Assignee:
LINTEC CORP (JP)
International Classes:
B32B27/00; B32B27/28; C08L31/04; C08L83/04; H01L21/301
Domestic Patent References:
WO2018083982A12018-05-11
WO2017154619A12017-09-14
Foreign References:
JP2019046827A2019-03-22
Attorney, Agent or Firm:
NISHIZAWA Kazuyoshi et al. (JP)
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