Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2017/033979
Kind Code:
A1
Abstract:
The present invention includes the following: a step for supplying an inert gas through a first supply pipe to inside a tank that stores a raw material, while supplying the raw material through a second supply pipe, connected by a connection pipe to the first supply pipe, from inside the tank to a processing chamber, evacuating the inert gas from the processing chamber, and thereby processing a substrate housed inside the processing chamber; and a step for purging the first supply pipe, the connection pipe, and the second supply pipe by alternately performing a step for supplying the inert gas, which has been heated, to inside the first supply pipe, the connection pipe, and the second supply pipe and then evacuating the inert gas, and a step for performing vacuum drawing in the first supply pipe, the connection pipe, and the second supply pipe.
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Inventors:
HASHIMOTO YOSHITOMO (JP)
HIROSE YOSHIRO (JP)
HIROSE YOSHIRO (JP)
Application Number:
PCT/JP2016/074697
Publication Date:
March 02, 2017
Filing Date:
August 24, 2016
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/31; C23C16/44; H01L21/316; H01L21/318
Foreign References:
| JP2005518653A | 2005-06-23 | |||
| JPH04363130A | 1992-12-16 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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