Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2014/156191
Kind Code:
A1
Abstract:
A manufacturing method for semiconductor light-emitting element is provided with: a placement step which places an aluminum nitride substrate (1), for which a semiconductor layer has been formed on a first main surface, within a chamber (51); and an oxide film forming step which, in a state in which water (H2O) molecules have been introduced within the chamber (51), heats the chamber (51), and upon a second main surface (1b) which is positioned on the opposite side of the first main surface of the aluminum nitride substrate (1), forms an oxide film that includes an amorphous oxide film.
Inventors:
TAKEDA KOUMEI (JP)
YAMADA SATOSHI (JP)
YAMADA SATOSHI (JP)
Application Number:
PCT/JP2014/001841
Publication Date:
October 02, 2014
Filing Date:
March 28, 2014
Export Citation:
Assignee:
ASAHI CHEMICAL IND (JP)
International Classes:
H01L33/22; C30B29/38; H01L33/32
Foreign References:
| JPH1074980A | 1998-03-17 | |||
| JP2011187658A | 2011-09-22 | |||
| JP2010132525A | 2010-06-17 | |||
| JP2003218383A | 2003-07-31 | |||
| JP2012238895A | 2012-12-06 |
Other References:
See also references of EP 2980862A4
Attorney, Agent or Firm:
MORI, Tetsuya et al. (JP)
Woods Tetsuya (JP)
Woods Tetsuya (JP)
Download PDF: