Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/105315
Kind Code:
A1
Abstract:
Provided in embodiments of the present application are a manufacturing method for a semiconductor structure, and a semiconductor structure. The manufacturing method comprises: providing a substrate, and forming a first isolation layer, a first stabilizing layer, a second isolation layer, and a second stabilizing layer which are sequentially arranged one above another on the substrate; forming a through hole running through the first isolation layer, the first stabilizing layer, the second isolation layer and the second stabilizing layer, and forming a lower electrode on the side wall and the bottom of the through hole; removing part of the thickness of the second stabilizing layer to expose part of the lower electrode; forming a mask layer on the side wall of the exposed lower electrode, and the mask layer adjacent to the side wall of the lower electrode being abutted; and etching the second stabilizing layer by using the mask layer as a mask to form a first opening. According to the embodiments of the present application, the production process can be simplified, and the quality of a capacitor can be improved.
Inventors:
LIU CHIH-CHENG (CN)
Application Number:
PCT/CN2021/111467
Publication Date:
May 27, 2022
Filing Date:
August 09, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108
Foreign References:
| US9018733B1 | 2015-04-28 | |||
| CN110970460A | 2020-04-07 | |||
| CN101005074A | 2007-07-25 | |||
| CN107706206A | 2018-02-16 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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