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Title:
SWITCH RESONATOR, FILTER, AND MANUFACTURING METHOD FOR SWITCH RESONATOR
Document Type and Number:
WIPO Patent Application WO/2022/105316
Kind Code:
A1
Abstract:
A switch resonator (100), a filter, and a manufacturing method for the switch resonator (100). The switch resonator (100) comprises a substrate (110), an upper electrode layer (120), a lower electrode layer (130), a gallium nitride layer (140), an aluminum gallium nitride layer (150), a first electrode (160), and a second electrode (170); the substrate (110) comprises a through hole area; the lower electrode layer (130) is provided on one side of the substrate (110); the gallium nitride layer (140) is provided on the side of the substrate (110) away from the lower electrode layer (130); the lower electrode layer (130) is in contact with the gallium nitride layer (140) in the through hole area; the aluminum gallium nitride layer (150) is provided on the side of the gallium nitride layer (140) away from the substrate (110); the upper electrode layer (120) and the first electrode (160) are located on the surface of the gallium nitride layer (140) away from the substrate (110), and the first electrode (160) is not in contact with the upper electrode layer (120); and the second electrode (170) is located on the side surface of the gallium nitride layer (140) away from the first electrode (160).

Inventors:
MIAO JIANMIN (CN)
ZHANG JINJIAO (CN)
Application Number:
PCT/CN2021/111771
Publication Date:
May 27, 2022
Filing Date:
August 10, 2021
Export Citation:
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Assignee:
MG MICROELECTRONICS CO LTD (CN)
International Classes:
H03H9/02
Foreign References:
CN112422098A2021-02-26
CN213484832U2021-06-18
CN111669145A2020-09-15
US20190199312A12019-06-27
Other References:
SHAH SHREYAS Y.; WEINSTEIN DANA: "Switchable Bulk-Acoustic-Wave Transducers on a GaN-MMIC Platform", 2018 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM (IFCS), 21 May 2018 (2018-05-21), pages 1 - 5, XP033489208, DOI: 10.1109/FCS.2018.8597536
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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