Title:
MANUFACTURING METHOD FOR THIN FILM BULK ACOUSTIC WAVE RESONATOR
Document Type and Number:
WIPO Patent Application WO/2022/057768
Kind Code:
A1
Abstract:
Disclosed in the present invention is a manufacturing method for a thin film bulk acoustic wave resonator, comprising: forming a first electrode, a second electrode, and a piezoelectric layer, the piezoelectric layer being positioned between the first electrode and the second electrode; forming a support layer on the first electrode; patterning the support layer to form a first cavity penetrating the support layer; and forming a first substrate on the support layer, the first substrate covering the first cavity; at least one of the first electrode and the second electrode has an arch bridge, the method for forming the electrode with an arch bridge comprising: forming an annular sacrificial protrusion; depositing a conductive material layer to cover the annular sacrificial protrusion and the peripheral area of the annular sacrificial protrusion; and removing the annular sacrificial protrusion to form an annular gap. The present invention uses the arch bridge structure of the electrode to surround the entire effective resonance region from the periphery of the effective resonance region, increasing the mechanical strength of the resonator.
Inventors:
HUANG HERB HE (CN)
Application Number:
PCT/CN2021/117997
Publication Date:
March 24, 2022
Filing Date:
September 13, 2021
Export Citation:
Assignee:
NINGBO SEMICONDUCTOR INT CORPORATION SHANGHAI BRANCH (CN)
International Classes:
H03H3/02; H03H9/17
Foreign References:
| CN103858342A | 2014-06-11 | |||
| CN110868177A | 2020-03-06 | |||
| CN101465628A | 2009-06-24 | |||
| CN110868170A | 2020-03-06 | |||
| CN101908865A | 2010-12-08 | |||
| CN110166014A | 2019-08-23 | |||
| CN111262540A | 2020-06-09 |
Attorney, Agent or Firm:
BEIJING SICHUANG DACHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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