Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
THIN-FILM BULK ACOUSTIC WAVE RESONATOR AND METHOD FOR MANUFACTURE THEREOF AND FILTER
Document Type and Number:
WIPO Patent Application WO/2022/057769
Kind Code:
A1
Abstract:
Disclosed are a thin-film bulk acoustic wave resonator and method for manufacture thereof and filter, the acoustic wave resonator comprising: a piezoelectric stack structure, said piezoelectric stack structure comprising a first electrode, a piezoelectric layer, and a second electrode, stacked in sequence from bottom to top; at least one of said first electrode and said second electrode comprises an annular arched bridge projecting in the direction away from the surface of said piezoelectric layer, the inner surface of said arched bridge enclosing an annular void, the area enclosed by said annular void being the effective resonant region of the resonator. In the present invention, the boundary of the effective resonant region is defined by the area where the arched bridge is located, and the ends of the first electrode and/or the second electrode at the boundary of the effective resonant region are caused to be in contact with gas in the void, thus the effect of eliminating the boundary clutter of the electrode in the effective resonant region is achieved, and the Q value of the resonator is increased.

Inventors:
HUANG HERB HE (CN)
Application Number:
PCT/CN2021/118000
Publication Date:
March 24, 2022
Filing Date:
September 13, 2021
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
NINGBO SEMICONDUCTOR INT CORPORATION SHANGHAI BRANCH (CN)
International Classes:
H03H3/02; H03H9/00; H03H9/02; H03H9/13; H03H9/205; H03H9/58
Foreign References:
CN110868177A2020-03-06
CN110868170A2020-03-06
CN110868174A2020-03-06
CN110166014A2019-08-23
CN111193485A2020-05-22
Attorney, Agent or Firm:
BEIJING SICHUANG DACHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
Download PDF: