Title:
MASK BLANK AND METHOD FOR PRODUCING TRANSFER MASK
Document Type and Number:
WIPO Patent Application WO/2021/192734
Kind Code:
A1
Abstract:
The present invention provides a mask blank which is capable of suppressing decrease in the etching rate of a hard mask film as a whole, while enhancing the pattern resolution, CD in-plane uniformity and CD linearity. A mask blank which has a structure wherein a thin film for pattern formation and a hard mask film are sequentially superposed on a light transmitting substrate in this order, and which is characterized in that: the thin film is formed of a material that contains chromium; the hard mask film has a multilayer structure that is composed of a lower layer and an upper layer; the lower layer is formed of a material that contains silicon and oxygen; the upper layer is formed of a material that contains tantalum and oxygen, with the content of the oxygen being 30% by atom or more; and the ratio of the thickness of the upper layer to the total thickness of the hard mask film is 0.7 or less.
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Inventors:
MAEDA HITOSHI (JP)
TANIGUCHI KAZUTAKE (JP)
MATSUI KAZUAKI (JP)
YONEMARU NAOTO (JP)
TANIGUCHI KAZUTAKE (JP)
MATSUI KAZUAKI (JP)
YONEMARU NAOTO (JP)
Application Number:
PCT/JP2021/005627
Publication Date:
September 30, 2021
Filing Date:
February 16, 2021
Export Citation:
Assignee:
HOYA CORP (JP)
TOPPAN INC (JP)
TOPPAN INC (JP)
International Classes:
G03F1/32; G03F1/80; H01L21/3065
Foreign References:
| JP2016212322A | 2016-12-15 | |||
| JP2016188958A | 2016-11-04 | |||
| JP2019179106A | 2019-10-17 | |||
| JP2017223905A | 2017-12-21 | |||
| JP2020020868A | 2020-02-06 | |||
| JP2017058703A | 2017-03-23 | |||
| JP6234898B2 | 2017-11-22 | |||
| JP4989800B2 | 2012-08-01 | |||
| JP2016188958A | 2016-11-04 |
Attorney, Agent or Firm:
NAGATA, Yutaka et al. (JP)
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