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Patent Searching and Data


Title:
MASK PARAMETER OPTIMIZATION METHOD AND APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/070738
Kind Code:
A1
Abstract:
A mask parameter optimization method, comprising: acquiring a test pattern, a light source parameter, and an initial mask parameter, wherein the initial mask parameter comprises a mask thickness and an initial mask side wall angle; generating a plurality of candidate mask parameters according to the initial mask side wall angle in the initial mask parameter, the plurality of candidate mask parameters comprising different mask side wall angles and the same mask thickness; obtaining an imaging contrast ratio of each candidate mask parameter on the basis of the test pattern and the light source parameter; and selecting an optimal mask side wall angle from the plurality of candidate mask parameters according to the imaging contrast ratio. By optimizing the mask parameter of a multilayer film lens structure, the imaging contrast ratio is significantly improved, and the imaging resolution is improved.

Inventors:
HE JIANFANG (CN)
WEI YAYI (CN)
SU YAJUAN (CN)
DONG LISONG (CN)
ZHANG LIBIN (CN)
CHEN RUI (CN)
MA LE (CN)
Application Number:
PCT/CN2021/129295
Publication Date:
May 04, 2023
Filing Date:
November 08, 2021
Export Citation:
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Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
G03F1/00; G03F1/70; G03F7/20
Foreign References:
CN108919601A2018-11-30
US20060095208A12006-05-04
JP2003207879A2003-07-25
EP0553543A11993-08-04
US20040188382A12004-09-30
US20090097004A12009-04-16
CN102947759A2013-02-27
Attorney, Agent or Firm:
BEIJING CHEN QUAN INTELLECTUAL PROPERTY LAW FIRM (CN)
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