Title:
MEMORY AND ACCESS METHOD
Document Type and Number:
WIPO Patent Application WO/2020/172891
Kind Code:
A1
Abstract:
The present application provides a magnetoresistive random access memory, which can reduce chip area. The magnetoresistive random access memory comprises: a plurality of stacked layers, each of stacked layers comprising a plurality of magnetic memory cells arranged in two dimensions; a plurality of select metal layers; each stacked layer is arranged between two select metal layers and is adjacent to said two select metal layers; each select metal layer is connected to the magnetic memory cell in the adjacent stacked layer, and is used for performing read and write operations on the magnetic memory cell.
Inventors:
XU JEFFREY JUNHAO (CN)
YANG HUAN (CN)
ZHANG RIQING (CN)
YANG HUAN (CN)
ZHANG RIQING (CN)
Application Number:
PCT/CN2019/076591
Publication Date:
September 03, 2020
Filing Date:
February 28, 2019
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C11/16
Foreign References:
| CN107910439A | 2018-04-13 | |||
| CN107910439A | 2018-04-13 | |||
| CN102593141A | 2012-07-18 | |||
| CN102593141A | 2012-07-18 | |||
| CN102314927A | 2012-01-11 | |||
| CN102314927A | 2012-01-11 | |||
| US20140254255A1 | 2014-09-11 |
Other References:
See also references of EP 3923288A4
Attorney, Agent or Firm:
LONGSUN LEAD IP LTD. (CN)
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