Title:
MEMORY DEVICE AND CONTROLLING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2024/060059
Kind Code:
A1
Abstract:
A memory device includes a memory cell array including a plurality of memory cells connected between a plurality of word lines and a plurality of bit lines, and a charge control circuit coupled to the memory cell array. The plurality of memory cells include a selected memory cell connected between a selected bit line and a word line, and an unselected memory cell connected between an unselected bit line and the word line. The charge control circuit is configured to provide a precharge voltage to the unselected bit line, and the precharge voltage is between -3 volts and -5 volts.
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Inventors:
XU LI (CN)
DONG ZUQI (CN)
LI JIANPING (CN)
DONG ZUQI (CN)
LI JIANPING (CN)
Application Number:
PCT/CN2022/120182
Publication Date:
March 28, 2024
Filing Date:
September 21, 2022
Export Citation:
Assignee:
YANGTZE ADVANCED MEMORY IND INNOVATION CENTER CO LTD (CN)
International Classes:
G11C13/00; G11C5/02
Foreign References:
| CN115004300A | 2022-09-02 | |||
| CN115083452A | 2022-09-20 | |||
| CN1628357A | 2005-06-15 | |||
| US20090067273A1 | 2009-03-12 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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