Title:
MEMORY DEVICE USING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/239194
Kind Code:
A1
Abstract:
According to the present invention, an N+ layer 3a that is connected to a source line SL, a first Si column 2a that stands in the vertical direction, and a second Si column 2b that is on top of the first Si column 2a are arranged on a substrate 1. A P+ layer 7aa is arranged on the central part of the first Si column 2a; and the P+ layer 7aa is surrounded by a P layer 7ab. A P+ layer 7ba is arranged on the central part of the second Si column 2b; the P+ layer 7ba is surrounded by a P layer 7bb; and an N+ layer 3b is arranged on the second Si column, while being connected to a bit line BL. In addition, a first gate insulating layer 4a is arranged so as to surround the first Si column 2a; and a second gate insulating layer 4b is arranged so as to surround the second Si column 2b. In addition, a first gate conductor layer 5a is arranged so as to surround the first insulating layer 4a, while being connected to a plate line PL; and a second gate conductor layer 5b is arranged so as to surround the second insulating layer 4b, while being connected to a word line WL. A data-holding operation for holding a hole group generated inside a channel region 7 by an impact ionization phenomenon or a gate-induced drain leakage current, and a data-erasing operation for removing the hole group from the inside of the channel region 7 are carried out by controlling voltages to be applied to the source line SL, the plate line PL, the word line WL and the bit line BL.
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| JPH1153890 | FLASH MEMORY |
| WO/2011/092788 | SEMICONDUCTOR STORAGE DEVICE |
Inventors:
HARADA NOZOMU (JP)
SAKUI KOJI (JP)
SAKUI KOJI (JP)
Application Number:
PCT/JP2021/018243
Publication Date:
November 17, 2022
Filing Date:
May 13, 2021
Export Citation:
Assignee:
UNISANTIS ELECT SINGAPORE PTE (SG)
HARADA NOZOMU (JP)
SAKUI KOJI (JP)
HARADA NOZOMU (JP)
SAKUI KOJI (JP)
International Classes:
G11C16/04; G11C11/401; H01L21/8242; H01L27/10; H01L27/108
Foreign References:
| JP2008218556A | 2008-09-18 | |||
| JP2006080280A | 2006-03-23 |
Attorney, Agent or Firm:
TANAKA Shinichiro et al. (JP)
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