Title:
MEMORY DEVICE USING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/239193
Kind Code:
A1
Abstract:
This memory device is provided with a page comprising multiple memory cells arranged in columns on a substrate. The memory device carries out: a page write operation for holding, inside a channel semiconductor layer, a hole group formed by an impact-ionization phenomenon or by a gate-induced drain leakage current by controlling voltages to be applied to a first gate conductor layer, a second gate conductor layer, a first impurity region, and a second impurity region of each of the memory cells included in the page; and a page erase operation for removing the hole group from the inside of the channel semiconductor layer by controlling voltages to be applied to the first gate conductor layer, the second gate conductor layer, a third gate conductor layer, a fourth gate conductor layer, the first impurity region, and the second impurity region. The first impurity region of the memory cells is connected to a source line, the second impurity region is connected to a bit line, one of the first gate conductor layer and the second gate conductor layer is connected to a word line, the other is connected to a first drive control line, and the bit line is connected to a sense amplifier circuit via a switch circuit. During a page read operation, page data of a memory cell group selected through the word line is read to the sense amplifier circuit, and during a page addition read operation, at least two pieces of the page data multiple-selected by at least two of the word lines is added through the bit line and read to the sense amplifier circuit.
Inventors:
SAKUI KOJI (JP)
HARADA NOZOMU (JP)
HARADA NOZOMU (JP)
Application Number:
PCT/JP2021/018239
Publication Date:
November 17, 2022
Filing Date:
May 13, 2021
Export Citation:
Assignee:
UNISANTIS ELECT SINGAPORE PTE (SG)
SAKUI KOJI (JP)
HARADA NOZOMU (JP)
SAKUI KOJI (JP)
HARADA NOZOMU (JP)
International Classes:
G06F12/00; G11C16/04; G11C11/401; H01L21/8242; H01L27/10; H01L27/108
Foreign References:
| JP2008218556A | 2008-09-18 | |||
| JP2006080280A | 2006-03-23 |
Attorney, Agent or Firm:
TANAKA Shinichiro et al. (JP)
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