Title:
MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/148393
Kind Code:
A1
Abstract:
Disclosed is a memory device in which a lower electrode, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, a composite interchange diamagnetic layer, and an upper electrode are stacked on a substrate, wherein the composite interchange diamagnetic layer comprises a single layer of a first magnetic layer, a non-magnetic layer, and a multilayer-structured second magnetic layer.
Inventors:
PARK JEA GUN (KR)
CHOI JIN YOUNG (KR)
CHOI JIN YOUNG (KR)
Application Number:
PCT/KR2016/001134
Publication Date:
September 22, 2016
Filing Date:
February 02, 2016
Export Citation:
Assignee:
IUCF-HYU (KR)
International Classes:
H01L43/02; H01L43/08; H01L43/10
Foreign References:
| KR20140025165A | 2014-03-04 | |||
| KR20150015602A | 2015-02-11 | |||
| KR20140011138A | 2014-01-28 | |||
| KR101195041B1 | 2012-10-31 | |||
| KR101041427B1 | 2011-06-15 |
Attorney, Agent or Firm:
NAM, SEUNG-HEE (KR)
남승희 (KR)
남승희 (KR)
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