MEMORY DEVICE - IUCF-HYU

Title:

MEMORY DEVICE

Document Type and Number:

WIPO Patent Application WO/2016/148394

Kind Code:

A1

Abstract:

The present invention comprises, on a substrate: a lower electrode, a first buffer layer, a seed layer, a composite interchange diamagnetic layer, a capping layer, a pinned layer, a tunnel barrier, a free layer, a second buffer layer, and an upper electrode. Disclosed is a memory device in which the upper electrode is sequentially stacked from the lower electrode on a substrate, and the composite interchange diamagnetic layer comprises a first magnetic layer, a non-magnetic layer, and a second magnetic layer in a stack, and the pinned layer, tunnel barrier and free layer form a magnetic tunnel junction.

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Inventors:

PARK JEA GUN (KR)
HONG SONG HWA (KR)

Application Number:

PCT/KR2016/001135

Publication Date:

September 22, 2016

Filing Date:

February 02, 2016

Export Citation:

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Assignee:

IUCF-HYU (KR)

International Classes:

H01L43/02; H01L43/08; H01L43/10; H01L43/12

Foreign References:

KR20140025165A	2014-03-04
KR20150015602A	2015-02-11
KR20140011138A	2014-01-28
KR101195041B1	2012-10-31
KR20110133595A	2011-12-13