Title:
MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/148395
Kind Code:
A1
Abstract:
Disclosed is a memory device in which a lower electrode, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, a composite interchange diamagnetic layer, and an upper electrode are stacked on a substrate, wherein the capping layer has at least two layers.
Inventors:
PARK JEA GUN (KR)
LEE DU YEONG (KR)
LEE DU YEONG (KR)
Application Number:
PCT/KR2016/001137
Publication Date:
September 22, 2016
Filing Date:
February 02, 2016
Export Citation:
Assignee:
IUCF-HYU (KR)
International Classes:
H01L43/02; H01L43/08; H01L43/10
Foreign References:
| KR20110133595A | 2011-12-13 | |||
| KR20140025165A | 2014-03-04 | |||
| KR20140011138A | 2014-01-28 | |||
| JP2012089858A | 2012-05-10 | |||
| KR20150015602A | 2015-02-11 |
Attorney, Agent or Firm:
NAM, SEUNG-HEE (KR)
남승희 (KR)
남승희 (KR)
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