Title:
MEMRISTOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/241970
Kind Code:
A1
Abstract:
The present invention provides a memristor and a preparation method therefor. The memristor comprises, from top to bottom, an upper electrode, a first vacancy concentration resistance change layer, a second vacancy concentration resistance change layer, and a lower electrode; the vacancy concentration of the first vacancy concentration resistance change layer is a fixed concentration value or changes in a gradient descent fashion; the vacancy concentration of the second vacancy concentration resistance change layer is a fixed concentration value or changes in a gradient descent fashion; the resistance change materials of the first vacancy concentration resistance change layer and the second vacancy concentration resistance change layer are the same; and the fixed concentration value or the lowest vacancy concentration value of the first vacancy concentration resistance change layer is greater than the fixed concentration value or the highest vacancy concentration value of the second vacancy concentration resistance change layer. By means of gradiently modulated resistance change materials and a multi-layer composite resistance change material constituted by a high vacancy concentration layer and a low vacancy concentration layer, the present invention ensures the localization of the distribution of an externally applied electric field.
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Inventors:
LI YI (CN)
HUANG XIAODI (CN)
FU YAOYAO (CN)
MIAO XIANGSHUI (CN)
HUANG XIAODI (CN)
FU YAOYAO (CN)
MIAO XIANGSHUI (CN)
Application Number:
PCT/CN2021/115337
Publication Date:
November 24, 2022
Filing Date:
August 30, 2021
Export Citation:
Assignee:
UNIV HUAZHONG SCIENCE TECH (CN)
International Classes:
H01L45/00
Foreign References:
| CN103606625A | 2014-02-26 | |||
| CN108963071A | 2018-12-07 | |||
| CN105514268A | 2016-04-20 |
Attorney, Agent or Firm:
WUHAN HUAZHIYU INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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