MEMS STRUCTURE AND ACCELERATION SENSOR - MURATA MANUFACTURING CO

Title:

MEMS STRUCTURE AND ACCELERATION SENSOR

Document Type and Number:

WIPO Patent Application WO/2016/039034

Kind Code:

A1

Abstract:

Provided is an MEMS structure wherein detection accuracy is improved by reducing a capacitance change caused by warpage generated in a substrate due to temperature dependency. In a first sensor 21, a weight section 24 and a third fixed electrode 55 that is provided on the substrate 12 face each other in the Z direction orthogonal to the plane of a substrate 12, and constitute a capacitor. When a closed curve 61 connecting two anchors 41 to each other in a plan view of the substrate 12 is set, the third fixed electrode 55 has a portion inside of the closed curve 61 as a first electrode section 55A, and a portion provided outside of the closed curve as a second electrode section 55B. The first sensor 21 has a relationship wherein a capacitance change quantity between the first electrode section 55A and the weight section 24 is cancelled by a capacitance change quantity between the second electrode section 55B and the weight section 24, in the cases where the warpage of the substrate 12 is generated due to a temperature change.

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Inventors:

SUZUKI TOSHIHISA (JP)

Application Number:

PCT/JP2015/071624

Publication Date:

March 17, 2016

Filing Date:

July 30, 2015

Export Citation:

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Assignee:

MURATA MANUFACTURING CO (JP)

International Classes:

G01P15/125; B81B3/00; G01P15/08; G01P15/18; H01L29/84

Domestic Patent References:

WO2009125510A1

2009-10-15

Foreign References:

JP2014071097A	2014-04-21
JP2010164564A	2010-07-29