Title:
METAL NITRIDE MATERIAL FOR THERMISTORS, METHOD FOR PRODUCING SAME, AND FILM-TYPE THERMISTOR SENSOR
Document Type and Number:
WIPO Patent Application WO/2014/196486
Kind Code:
A1
Abstract:
Provided are: a metal nitride material for thermistors that has high heat resistance, is highly reliable, and can be formed into a film directly on, e.g., a film without firing; a method for producing said metal nitride material; and a film-type thermistor sensor. This metal nitride material used for thermistors is made of a metal nitride represented by the general formula VxAlyNz (wherein 0.70 ≤ y/(x+y) ≤ 0.98, 0.4 ≤ z ≤ 0.5, and x+y+z = 1), and has a single-phase wurtzite hexagonal crystal structure. This method for producing said metal nitride material for thermistors comprises a film formation step for forming a film by performing reactive sputtering in a nitrogen-containing atmosphere by using a V-Al alloy sputtering target.
Inventors:
FUJITA TOSHIAKI (JP)
TANAKA HIROSHI (JP)
NAGATOMO NORIAKI (JP)
TANAKA HIROSHI (JP)
NAGATOMO NORIAKI (JP)
Application Number:
PCT/JP2014/064558
Publication Date:
December 11, 2014
Filing Date:
May 26, 2014
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
H01C7/04; C01G31/00; C23C14/06; C23C14/34; C30B29/38; G01K7/22; H01C17/12
Foreign References:
| JPH10270201A | 1998-10-09 | |||
| JP2008251611A | 2008-10-16 | |||
| JPH06158272A | 1994-06-07 | |||
| JPS6396262A | 1988-04-27 | |||
| JPH0590011A | 1993-04-09 | |||
| JP2000068110A | 2000-03-03 | |||
| JP2000348903A | 2000-12-15 | |||
| JP2006324520A | 2006-11-30 | |||
| JP2004319737A | 2004-11-11 | |||
| JPH10270201A | 1998-10-09 |
Attorney, Agent or Firm:
TAKAOKA, Ryoichi (JP)
Ryoichi Takaoka (JP)
Ryoichi Takaoka (JP)
Download PDF:
Previous Patent: INFORMATION PROCESSOR AND PROGRAM
Next Patent: ORGANIC SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING SAME, AND TRANSISTOR STRUCTURE
Next Patent: ORGANIC SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING SAME, AND TRANSISTOR STRUCTURE