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Title:
METAL-NITRIDE THERMISTOR MATERIAL, MANUFACTURING METHOD THEREFOR, AND FILM-TYPE THERMISTOR SENSOR
Document Type and Number:
WIPO Patent Application WO/2014/097910
Kind Code:
A1
Abstract:
Provided is a metal-nitride thermistor material that has a high heat tolerance, is highly reliable, and can be used to form a film or the like directly, without firing. Also provided are a method for manufacturing said metal-nitride thermistor material and a film-type thermistor sensor. This metal-nitride material for use in a thermistor comprises a metal nitride that can be represented by the general formula (Ti1−vCrv)xAly(N1−wOw)z (with 0.0 < v < 1.0, 0.70 ≤ y/(x+y) ≤ 0.95, 0.45 ≤ z ≤ 0.55, 0 < w ≤ 0.35, and x+y+z = 1), and said metal-nitride material has a single-phase wurtzite hexagonal crystal structure.

Inventors:
FUJITA TOSHIAKI (JP)
TANAKA HIROSHI (JP)
NAGATOMO NORIAKI (JP)
Application Number:
PCT/JP2013/082905
Publication Date:
June 26, 2014
Filing Date:
December 03, 2013
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/06; C23C14/34; G01K7/22; H01C7/04
Foreign References:
JP2012182258A2012-09-20
JP2004319737A2004-11-11
JPH0590011A1993-04-09
JPH06158272A1994-06-07
JP2003226573A2003-08-12
JP2006324520A2006-11-30
JP2004319737A2004-11-11
JPH10270201A1998-10-09
Other References:
See also references of EP 2937441A4
Attorney, Agent or Firm:
TAKAOKA, Ryoichi (JP)
Ryoichi Takaoka (JP)
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