METAL OXIDE FILM FORMATION METHOD

WIPO Patent Application WO/2016/203595

A1

The purpose of the present invention is to obtain a metal oxide film formation method which makes it possible to produce a high-quality metal oxide film while increasing production efficiency. The film formation method according to the present invention involves: obtaining a starting material solution mist (M1) by misting a starting material solution (14) that contains aluminum, a metal element, inside a solution vessel (15); obtaining an aid agent mist (M2) by misting a reaction aid solution (24) inside a solution vessel (25) that is independent from the solution vessel (15); supplying the starting material solution mist (M1) and the aid agent mist (M2) obtained through independent channels L1, L2 to a mixing vessel (8), and thereafter, obtaining a mixture mist (M3) by mixing the starting material solution mist (M1) and the aid agent mist (M2) inside the mixing vessel (8); and supplying the mixture mist (M3) onto the rear surface of a heated P-type silicon substrate (4) at atmospheric pressure, inside a reaction vessel (11) that is provided independently from the mixing vessel (8).

HIRAMATSU TAKAHIRO (JP)
ORITA HIROYUKI (JP)
KAWAHARAMURA TOSHIYUKI (JP)
FUJITA SHIZUO (JP)
UCHIDA TAKAYUKI (JP)

PCT/JP2015/067536

December 22, 2016

June 18, 2015

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TOSHIBA MITSUBISHI-ELECTRIC IND SYSTEMS CORP (JP)
KOCHI PREFECTURAL PUBLIC UNIV CORP (JP)
UNIV KYOTO (JP)

C23C16/40; C23C16/455; C23C16/44; H01L21/31; H01L21/316

WO2011151889A1	2011-12-08
WO2012124047A1	2012-09-20

JP2008078113A	2008-04-03
JP2001509641A	2001-07-24
JPH09235675A	1997-09-09
JPH07211643A	1995-08-11

YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)

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