Title:
METHOD AND APPARATUS FOR DETERMINING AN ETCH PROPERTY USING AN ENDPOINT SIGNAL
Document Type and Number:
WIPO Patent Application WO2004042788
Kind Code:
A3
Abstract:
The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.
Inventors:
YUE HONGYU (US)
LAM HIEU A (US)
LAM HIEU A (US)
Application Number:
PCT/US2003/031528
Publication Date:
July 15, 2004
Filing Date:
October 31, 2003
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
YUE HONGYU (US)
LAM HIEU A (US)
YUE HONGYU (US)
LAM HIEU A (US)
International Classes:
H01J37/32; (IPC1-7): H05H1/00; H01L21/00
Foreign References:
| US5658418A | 1997-08-19 | |||
| US5467013A | 1995-11-14 | |||
| US6450683B1 | 2002-09-17 | |||
| US5888337A | 1999-03-30 |
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