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Title:
METHOD FOR CLEANING COMPOUND SEMICONDUCTOR AND SOLUTION FOR CLEANING OF COMPOUND SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2016/013239
Kind Code:
A1
Abstract:
Provided is a method for cleaning a compound semiconductor, which is capable of reducing environmental load. This method for cleaning a compound semiconductor comprises a step for carrying out a treatment (4) for cleaning a compound semiconductor that comprises gallium as a constituent element at a temperature of 70°C or more with use of a solution (17) which contains pure water and less than 65 wt% of sulfuric acid and has a hydrogen ion concentration of pH 2 or less and a redox potential of 0.6 volt or more.

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Inventors:
NAGAO KENJI (JP)
NAKAMURA KENICHI (JP)
TERAMOTO AKINOBU (JP)
Application Number:
PCT/JP2015/054471
Publication Date:
January 28, 2016
Filing Date:
February 18, 2015
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
UNIV TOHOKU (JP)
International Classes:
H01L21/304; C30B29/38; H01L21/308
Domestic Patent References:
WO2005041283A12005-05-06
Foreign References:
JPH07161672A1995-06-23
JP2007234952A2007-09-13
JP2000183015A2000-06-30
JP2006032736A2006-02-02
JP2008282943A2008-11-20
Other References:
See also references of EP 3174087A4
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
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