Title:
METHOD FOR CLEANING SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2023/032488
Kind Code:
A1
Abstract:
The present invention provides a method for cleaning a silicon wafer, the method roughening the silicon wafer and comprising: a step for preparing, as the above-described silicon wafer, a silicon wafer that has no natural oxide film, thereby having an exposed bare surface; and a cleaning step for roughening the front and back surfaces or the back surface of the thus-prepared silicon wafer by cleaning the silicon wafer with an aqueous solution that contains ammonium hydroxide and a hydrogen peroxide solution. With respect to this method for cleaning a silicon wafer, an aqueous solution that has an etching selectivity of Si of 95 to 1,100 with respect to SiO2 is used in the cleaning step. Consequently, the present invention provides: a cleaning method which is capable of roughening the front and back surfaces or the back surface of a silicon wafer; and a method for producing a silicon wafer, the method enabling the achievement of a silicon wafer, only one surface of which is roughened.
Inventors:
FUJII KOTA (JP)
ABE TATSUO (JP)
ABE TATSUO (JP)
Application Number:
PCT/JP2022/027965
Publication Date:
March 09, 2023
Filing Date:
July 19, 2022
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/304; H01L21/306
Foreign References:
| JP2012054451A | 2012-03-15 | |||
| US20150357180A1 | 2015-12-10 | |||
| JP2015126067A | 2015-07-06 | |||
| JPH07142435A | 1995-06-02 | |||
| JPH10242107A | 1998-09-11 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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