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Title:
THE METHOD OF CONTROLLING SCRATCHING OF THE POLISHED SURFACE OF SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2009/021364
Kind Code:
A1
Abstract:
The present invention provides a method of controlling scratching of the polished surfaces of silicon wafers, which comprises adhering silicon wafers onto the polishing discs of a polisher, then holding the polishing discs onto the polishing heads of the polisher, controlling the pressure, the rotation speed of the upper and lower discs of the polisher, and injecting a polishing liquid between the polishing discs and the silicon wafer. The improvement is that:the polishing liquid comprises abradant, penetrant, lubricant, pH regulator, surfactant, chelating agent and deionized water; the pressure of the polisher is controlled below 50kPa, therotation speed of the upper polishing discs is controlled below 60rpm, the rotation speed of the lower polishing discs is controlled below 60rpm. It can reduce the scratching of the polished surfaces of silicon wafers, and can ensure the polishing of silicon wafer to have higher removal rate, and the cost is low, suitable for the industrial scale demand.

Inventors:
ZHONG JIHE (CN)
Application Number:
PCT/CN2007/002754
Publication Date:
February 19, 2009
Filing Date:
September 18, 2007
Export Citation:
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Assignee:
JIANGSU HAIXUN INDUSTRY & COMM (CN)
ZHONG JIHE (CN)
International Classes:
H01L21/304; B24B57/02; C09G1/02
Foreign References:
CN1919950A2007-02-28
CN1858087A2006-11-08
CN101049681A2007-10-10
CN1637102A2005-07-13
CN1609155A2005-04-27
JP2004179294A2004-06-24
US4070797A1978-01-31
Attorney, Agent or Firm:
TIANJIN SANYUAN PATENT & TRADEMARK CO. LTD. (No. 70 Qixiangtai RoadHexi District, Tianjin 4, CN)
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