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Title:
METHOD FOR COPPER CMP USING POLYMERIC COMPLEXING AGENTS
Document Type and Number:
WIPO Patent Application WO2003050864
Kind Code:
A3
Abstract:
The invention provides a method of polishing a substrate comprising a metal layer comprising copper. The method comprises the steps of (i) providing a chemical-mechanical polishing system comprising a liquid carrier, a polishing pad, an abrasive, and a negatively charged polymer or copolymer, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the substrate to polish the metal layer of the substrate. The negatively charged polymer or copolymer comprises one or more monomers selected from sulfonic acids, sulfonates, sulfates, phosphonic acids, phosphonates, and phosphates, has a molecular weight of 20,000 g/mol or more, and coats at least a portion of the abrasive such that the abrasive has a zeta potential value that is lowered upon interaction of the negatively charged polymer or copolymer with the abrasive.

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Inventors:
SCHROEDER DAVID J
CARTER PHILLIP
CHAMBERLAIN JEFFREY P
MILLER KYLE
CHERIAN ISAAC K
Application Number:
PCT/US2002/041453
Publication Date:
September 12, 2003
Filing Date:
December 03, 2002
Export Citation:
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Assignee:
CABOT MICROELECTRONICS CORP (US)
International Classes:
B24B37/00; C09G1/02; C09K3/14; H01L21/304; H01L21/321; (IPC1-7): H01L21/321
Domestic Patent References:
WO2002094957A22002-11-28
Foreign References:
US5876490A1999-03-02
US6303049B12001-10-16
EP1104778A22001-06-06
Other References:
BYUNG-CHAN LEE, DUQUETTE D J, GUTMANN R J: "Synthesis of Model Alumina Slurries for Damascene Patterning of Copper", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, vol. 671, 2001, pages m2.7.1 - m2.7.12, XP008016931
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 20 10 July 2001 (2001-07-10)
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