METHOD FOR DEPOSITING CYCLIC THIN FILM - EUGENE TECHNOLOGY CO LTD

Title:

METHOD FOR DEPOSITING CYCLIC THIN FILM

Document Type and Number:

WIPO Patent Application WO/2012/018210

Kind Code:

A2

Abstract:

Provided is a method for depositing a cyclic thin film that can provide an excellent film quality and step coverage. The method for depositing cyclic thin film according to one embodiment of the present invention comprises: a step for forming a silicon thin film on a substrate by repeating a step for depositing the silicon on a substrate by injecting silicon precursors inside a chamber loaded with the substrate, and a first purge step for removing unreacted silicon precursors and reaction byproducts from the inside of the chamber; and a step for forming the silicon thin film into an insulation film having silicon by forming a plasma atmosphere inside the chamber.

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Inventors:

KIM HAI WON (KR)
WOO SANG HO (KR)

Application Number:

PCT/KR2011/005649

Publication Date:

February 09, 2012

Filing Date:

August 01, 2011

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Assignee:

EUGENE TECHNOLOGY CO LTD (KR)
KIM HAI WON (KR)
WOO SANG HO (KR)

International Classes:

H01L21/31; H01L21/205

Foreign References:

KR20090016403A	2009-02-13
KR20070055898A	2007-05-31
KR20020081902A	2002-10-30

Attorney, Agent or Firm:

JEONG, SEONG JIN (KR)
정성진 (KR)

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