Title:
METHOD OF DEPOSITING DLC ON SUBSTRATE
Document Type and Number:
WIPO Patent Application WO2004071981
Kind Code:
A3
Abstract:
Durability and/or longevity of a diamond-like carbon (DLC) layer can be improved by varying the voltage and/or ion energy used to ion beam deposit the DLC layer. For example, a relatively low voltage may be used to ion beam deposit a first portion of the DLC layer on the substrate (Figure 2A), and thereafter a second higher voltage(s) (Figure 2B) used to ion beam deposit a second higher density portion of the DLC layer over the first portion of the DLC layer. In such a manner, ion mixing at the bottom of the DLC layer can be reduced, and the longevity and/or durability of the DLC improved.
Inventors:
VEERASAMY VIJAYEN S (US)
THOMSEN SCOTT V (US)
THOMSEN SCOTT V (US)
Application Number:
PCT/US2004/003311
Publication Date:
March 17, 2005
Filing Date:
February 04, 2004
Export Citation:
Assignee:
GUARDIAN INDUSTRIES (US)
VEERASAMY VIJAYEN S (US)
THOMSEN SCOTT V (US)
VEERASAMY VIJAYEN S (US)
THOMSEN SCOTT V (US)
International Classes:
C23C14/06; C23C14/22; (IPC1-7): C23C16/26
Foreign References:
| US6504294B1 | 2003-01-07 | |||
| US6046758A | 2000-04-04 | |||
| US6395412B1 | 2002-05-28 |
Other References:
See also references of EP 1595004A4
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